Fan Ren was responsible for high-speed device development in the compound semiconductor area at Bell Labs prior to joining UF in 1998. He has over 22 years’ experience in device fabrication of state-of-the-art electronic devices. He is a Fellow of IEEE, ECS, SPIE, MRS, APS and AVS. Prof. Ren will be responsible for electrical measurements, dielectric depositions, contact formation and some of the data interpretation. Prof. Ren also has an extensive background in radiation effects and in the development of wide bandgap materials and devices and demonstrated the first Ga2O3/Gd2O3 insulated gate n-channel enhancement-mode InGaAs MOSFET's.